Atomistic simulations in nanostructures composed of tens of millions of atoms: Importance of long-range strain effects in quantum dots

  • M. Korkusinski
  • , G. Klimeck
  • , H. Xu
  • , S. Lee
  • , S. Goasguen
  • , F. Saied

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Strain in self-assembled quantum dots is a long-range phenomenon, and its realistic determination requires a large computational domain. To tackle this problem for an embedded InAs quantum dot NEMO-3D uses the atomistic VFF Keating model containing up to 64 million atoms. Interatomic distance changes obtained are used to influence the sp3d5s* tight-binding electronic Hamiltonian defined in a subdomain containing up to 21 million atoms (matrix size of order of 4×108). Targeted eigenstates with correct symmetry are found reliably even in such large systems. NEMO-3D is used to analyze the dependence of the dot states on the size of the strain domain and the boundary conditions. The energies of a deeply embedded dot depend dramatically on the strain domain size. For dots buried under a thin capping layer, on the other hand, the existence of a free surface at the top of the sample allows for an effective relaxation of atoms, and the penetration of strain into the barrier is small.

Original languageEnglish
Title of host publication2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings
EditorsM. Laudon, B. Romanowicz
Pages534-537
Number of pages4
StatePublished - 2005
Event2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 - Anaheim, CA, United States
Duration: May 8 2005May 12 2005

Publication series

Name2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings

Conference

Conference2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005
Country/TerritoryUnited States
CityAnaheim, CA
Period05/8/0505/12/05

Keywords

  • Atomistic simulations
  • Electronic structure
  • Nanoelectronics
  • Parallel computing
  • Quantum dots
  • Strain
  • Tight binding

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