@inproceedings{cf38be426b23470780f37594e705df47,
title = "Atomistic simulations of long-range strain and spatial asymmetry effects in multimillion-atom single and double quantum dot nanostructures",
abstract = "The Nanoelectronic Modeling Tool NEMO-3D is a simulator providing quantitative estimates for the strain distribution and the single-particle electronic structure of semiconductor nanodevices, such as self-assembled quantum dots, quantum wells and wires. Both strain and electronic structure are computed using semi-empirical nearest-neighbor tight-binding schemes implemented on the atomistic level. The software tool is parallelized using MPI, which makes it possible to treat multimillion-atom systems. This work reports on application of the NEMO-30 tool to single and coupled quantum dot nanostructures. The spatial extent and directionality of the strain field produced by a single In As quantum dot embedded in the GaAs barrier material is explored. In the multidot systems, the electron and hole states are computed as a function of the interdot distance for vertically coupled double-dot molecules.",
author = "Gerhard Klimeck and Marek Korkusinski and Xu Haiying and Lee Seungwon and Sebastien Goasguen and Faisal Saied",
year = "2005",
doi = "10.1109/sispad.2005.201541",
language = "English",
isbn = "4990276205",
series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "335--338",
booktitle = "2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005",
address = "United States",
note = "2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005 ; Conference date: 01-09-2005 Through 03-09-2005",
}